缀饰激子在半导体微腔中的辐射  

Radiation of Dressed Excitons in the Semiconductor Microcavity

作　　者：刘世安[1] 林世鸣[1] 康学军[1] 张光斌[1] 程澎[1] 王启明[1] 

机构地区：[1]中国科学院半导体研究所,集成光电子国家重点实验室,北京100083

出　　处：《光电子．激光》2000年第3期221-223,共3页Journal of Optoelectronics·Laser

基　　金："八六三"高技术项目;国家"八六三"计划资助项目;国家自然科学基金资助项目! ( 698962 60 ;696870 0 3 )

摘　　要：本文建立了半导体微腔的缀饰激子模型。在 VCSEL 器件量子阱中的激子首先通过内电磁场与腔耦合 ,形成缀饰态。而后作为多粒子过程 ,缀饰激子与腔内真空场耦合产生辐射。通过 QED方法 ,我们得到偶极子辐射密度方程和系统能量衰变方程。从方程解的讨论中 ,我们得到超辐射和偶极子微腔方向效应的结果 ,同时预言了当内场耦合足够强时 ,缀饰激子可以直接辐射到一个很窄的激光模中。:In this paper,we introduced the dressed exciton model of the semiconductor micro cavity device.In the semiconductor quantum well(QW) of vertical cavity surface emission (VCSE) device,the excitons first coupled to the cavity through the intra electromagnetic field and formed the dressed excitons.Then these dressed excitons decayed into the vacuum cavity optical mode,as a multi particles process.Through the QED method,the dipole emission density and system energy decay equation were obtained.From the discussion of the solutions in three regimes,the superradiation and anisotropic decay rate were well understood.

关 键 词：缀饰激子 半导体微腔 超辐射 

分 类 号：O471.1[理学—半导体物理] TN365[理学—物理]