MSM结构GaAs探测器的抗辐照性能  

Radiation Hardness Properties of MSM Structure Gallium Arsenide Detectors

作　　者：李澄[1] 陈宏芳[1] 吴冲[1] 张永明[1] 许咨宗[1] 乐毅 邵传芬[2] 史常忻[2] 

机构地区：[1]中国科技大学近代物理系,合肥230027 [2]上海交通大学微电子技术研究所,上海200030

出　　处：《高能物理与核物理》2000年第5期431-438,共8页High Energy Physics and Nuclear Physics

基　　金：国家自然科学基金资助

摘　　要：研究一种双金属接触的GaAs半导体探测器在 1 4MeV中子辐照下的性能 .测量了探测器经过 1 0 12 n/cm2 中子辐照剂量后的反向漏电流、电荷收集效率和最小电离粒子能谱 ,并且与 6 0 Co 1 2 5MeV光子辐照的测量结果相比较 .对中子辐照引起探测器时间性能变化和辐照损伤机制进行了探讨 .并根据实验结果提出了这种双金属接触GaAs探测器灵敏层分布的一种假设 。Radiation hardness of a particle detector, double metal contact GaAs semiconductors has been investigated in 14 MeV neutron exposure. The leak current, the charge collection efficiency and the spectrum of MIPs are measured after 10 12 n/cm 2 dose. The results are compared with 60 Co 1.25MeV γ photons radiation. The mechanism of radiation damage and the effect on time performances of GaAs detectors are discussed. A hypothesis of the active layer distribution of the GaAs detectors based on experiment data is given. The computation agrees with test results.

关 键 词：GaAs半导体 粒子探测器 辐照损伤 MSM结构 

分 类 号：O572.11[理学—粒子物理与原子核物理]