碲镉汞液相外延薄膜生长技术与性能  

GROWTH AND CHARACTERIZATION OF LIQUID PHASE EPITAXIAL Hg_(1-x) Cd_x Te FILMS 

作　　者：黄根生[1] 陈新强[1] 杨建荣[1] 何力[1] 

机构地区：[1]中国科学院上海技术物理研究所半导体材料器件研究中心

出　　处：《红外与毫米波学报》2000年第2期145-148,共4页Journal of Infrared and Millimeter Waves

基　　金：国家自然科学基金!(编号 69425002)资助项目

摘　　要：用液相外延的方法在 Cd Zn Te衬底上生长 Hg1 - x Cdx Te材料 ,获得了表面形貌好 ,位错密度低 ,组份均匀的碲镉汞外延材料 ,生长工艺对材料的参数控制有较好的重复性 .外延材料经热处理后 ,材料的 P型和 N型电学参数都达到较好的水平 。The liquid phase epitaxy growth of Hg 1-x Cd x Te films from Te rich solution on (111)B CdZnTe substrate in slide boat was reported. Microscope and IR transmittance spectra and Hall measurements were carried out to characterize the quality of epilayers. Hg 1-x Cd x Te epilayers in 1～3μm,3~5μm,8~14μm ranges were grown with flat surface, low density of dislocation and uniform composition. Good growth reproducibility of material parameters was obtained. Under an appropriate thermal annealing condition, some good results on electrical properties of p type and n type Hg 1-x Cd x Te were achieved, and they could be reproduced well.

关 键 词：液相外延 组份 电学参数 碲镉汞 薄膜生长 

分 类 号：TN304.23[电子电信—物理电子学] O484.1[理学—固体物理]