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作 者:HU Ting QIU Chen YU Ping YANG LongZhi WANG WanJun JIANG XiaoQing YANG Mei ZHANG Lei YANG JianYi
机构地区:[1]Department of Information Science and Electronics Engineering and Cyrus Tang Center for Sensor Materials and Applications,Zhejiang University [2]Department of Electrical and Computer Engineering,University of Nevada,Las Vegas,Nevada 89154,USA [3]Department of Engineering and Aviation Sciences,University of Maryland Eastern Shore Princess Anne,MD 21853,USA
出 处:《Chinese Science Bulletin》2013年第7期543-553,共11页
基 金:supported by the National Natural Science Foundation of China (Grants Nos. 60977043,61007063 and 61228501);National High-Tech Research & Development Program of China ("863" Project)(Grant No. 2012AA012203);Tang Zhongyin Fund;the Scholarship Award for Excellent Doctoral Student granted by the Ministry of Educationof China
摘 要:As the transistor's feature scales down and the integration density of the monolithic circuit increases continuously,the traditional metal interconnects face significant performance limitation to meet the stringent demands of high-speed,low-power and low-latency data transmission for on-and off-chip communications.Optical technology is poised to resolve these problems.Due to the complementary metal-oxide-semiconductor(CMOS) compatible process,silicon photonics is the leading candidate technology.Silicon photonic devices and networks have been improved dramatically in recent years,with a notable increase in bandwidth from the megahertz to the multi-gigahertz regime in just over half a decade.This paper reviews the recent developments in silicon photonics for optical interconnects and summarizes the work of our laboratory in this research field.As the transistor's feature scales down and the integration density of the monolithic circuit increases continuously, the traditional metal interconnects face significant performance limitation to meet the stringent demands of high-speed, low-power and low-latency data transmission for on- and off-chip communications. Optical technology is poised to resolve these problems. Due to the complementary metal-oxide-semiconductor (CMOS) compatible process, silicon photonics is the leading candidate technology. Silicon photonic devices and networks have been improved dramatically in recent years, with a notable increase in bandwidth from the megahertz to the multi-gigahertz regime in just over half a decade. This paper reviews the recent devel- opments in silicon photonics for optical interconnects and summarizes the work of our laboratory in this research field.
关 键 词:光子器件 片上网络 硅 组件 金属互连 光学技术 单片电路 集成密度
分 类 号:TN2[电子电信—物理电子学] TP303[自动化与计算机技术—计算机系统结构]
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