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作 者:XIAO Xi LI ZhiYong CHU Tao XU Hao LI XianYao NEMKOVA Anastasia KANG Xiong YU YuDe YU JinZhong
出 处:《Chinese Science Bulletin》2013年第7期586-593,共8页
基 金:supported by the National Basic Research Program of China (Grant Nos. 2011CB301701,2012CB933502 and 2012CB933504);the National Natural Science Foundation of China (Grant Nos. 60877036 and 61107048);the Chinese Academy of Sciences for a fellowship for young international scientists (Grant No. 2011Y1GB07);the China Postdoctoral Science Foundation (Grant No. 2011M500372)
摘 要:Silicon photonic devices based on complementary-metal-oxide-semiconductor(CMOS) compatible technologies have shown attractive performances on very-large-scale monolithic optoelectronic integration,high speed modulation and switching,and efficient off-chip optical coupling.This paper presents the recent progress on fast silicon optical modulation,wavelength-insensitive optical switching and efficient optical coupling techniques in our group.Several CMOS-compatible silicon optical couplers with different structures have been developed,showing the highest coupling efficiency of 65%.Broadband silicon-based optical switches with sub-nanosecond switching on-off time are experimentally realized.Silicon modulators with novel PN junctions are demonstrated with the speed up to 50 Gb s-1.Silicon photonic devices based on complementary-metal-oxide-semiconductor (CMOS) compatible technologies have shown attractive performances on very-large-scale monolithic optoelectronic integration, high speed modulation and switching, and efficient off-chip optical coupling. This paper presents the recent progress on fast silicon optical modulation, wavelength- insensitive optical switching and efficient optical coupling techniques in our group. Several CMOS-compatible silicon optical couplers with different structures have been developed, showing the highest coupling efficiency of 65%. Broadband sili- con-based optical switches with sub-nanosecond switching on-off time are experimentally realized. Silicon modulators with novel PN junctions are demonstrated with the speed up to 50 Gb s-1.
关 键 词:光子器件 光学互连 开发 金属氧化物半导体 CMOS兼容 硅 光耦合技术 光电子集成
分 类 号:TN2[电子电信—物理电子学] O438[机械工程—光学工程]
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