InGaN metal-insulator-semiconductor photodetector using Al_2O_3 as the insulator  

作　　者：ZHANG KaiXiao MA AiBin JIANG JingHua XU Yan TAI Fei GONG JiangFeng ZOU Hua ZHU WeiHua 

机构地区：[1]College of Science,Hohai University [2]College of Mechanics & Materials,Hohai University

出　　处：《Chinese Science Bulletin》2013年第7期633-636,共4页

基　　金：supported by the National Natural Science Foundation of China (Grant No. 51141002);the Fundamental Research Funds for the Central Universities (B1020270);Natural Science Foundation of Jiangsu Province of China (Grant No. BK2010521)

摘　　要：In this paper,an InGaN metal-insulator-semiconductor(MIS) photodetector with an ultra-thin Al2O3 insulation layer deposited by atomic layer deposition(ALD) was studied.A high photoelectric responsivity of 0.25 A/W and a spectral responsivity rejection ratio of about three orders of magnitude at 1 V reverse bias were achieved for this MIS photodetector.The dominant carrier transport mechanism in the InGaN MIS photodetectors is submitted to the space charge limited current(SCLC) mechanism at high field and exhibits an Ohmic-like conduction at low electric field.The results indicate that the ultra-thin Al2O3 film deposited by the ALD technique can act as an excellent insulation dielectric for the InGaN photodetectors.In this paper, an InGaN metal-insulator-semiconductor （MIS） photodetector with an ultra-thin A1203 insulation layer deposited by atomic layer deposition （ALD） was studied. A high photoelectric responsivity of 0.25 A/W and a spectral responsivity re- jection ratio of about three orders of magnitude at 1 V reverse bias were achieved for this MIS photodetector. The dominant carrier transport mechanism in the InGaN MIS photodetectors is submitted to the space charge limited current （SCLC） mecha- nism at high field and exhibits an Ohmic-like conduction at low electric field. The results indicate that the ultra-thin AI203 film deposited by the ALD technique can act as an excellent insulation dielectric for the InGaN photodetectors.

关 键 词：半导体光电探测器 INGAN 绝缘体 AL 金属 空间电荷限制电流 原子层沉积 光电检测器 

分 类 号：TN36[电子电信—物理电子学] TN312.8