前驱体和退火温度对Nd_2O_3薄膜组分影响的定量研究  

Quantitative analysis on the influences of the precursor and annealing temperature on Nd_2O_3 film composition

作　　者：张旭杰[1] 刘红侠[1] 范小娇[1] 樊继斌[1] 

机构地区：[1]西安电子科技大学微电子学院,宽禁带半导体材料与器件重点实验室,西安710071

出　　处：《物理学报》2013年第3期367-373,共7页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:61076097;60936005);教育部科技创新工程重大项目培育资金(批准号:708083);中央高校基本科研业务费专项资金(批准号:20110203110012)资助~~

摘　　要：采用Nd(thd)3和O3作为反应前驱体,利用先进的原子层淀积方法在P型硅(100)衬底上制备了超薄Nd2O3介质膜,并在N2气氛下进行了退火处理.采用X射线光电子能谱仪对薄膜样品组分进行分析.研究结果表明,淀积过程中将前驱体温度从175℃提高到185℃后,薄膜的质量得到提高,O/Nd原子比达到1.82,更接近理想的化学计量比,介电常数也从6.85升高到10.32.In this paper, ultra-thin Nd2O3 dielectric films are deposited on p-type silicon substrates by advanced atomic layer deposition method. Nd （thd）3 and O3 are used as the reaction precursors separately. The as-grown samples are annealed in N2 atmosphere in a temperature range of 700—900 ？C. The samples are investigated at room temperature by X-ray photoelectron spectroscopy and the changes of the film composition at different annealing temperatures are discussed in detail. For a higher precursor temperature of 185？C in the deposition process, the ratio of oxygen to neodymium atoms for the as-grown film is 1.82, which is close to the stoichiometry. Dielectric constant increases from 6.85 to 10.32.

关 键 词：原子层淀积 ND2O3 前驱体温度 X射线光电子能谱仪 

分 类 号：O484[理学—固体物理]