一种硅微波功率三极管的失效分析  

Failure Analysis on a Silicon Microwave Power Transistor

作　　者：李兴鸿[1] 赵俊萍[1] 赵春荣[1] 赖世波[1] 

机构地区：[1]北京微电子技术研究所,北京100076

出　　处：《电子产品可靠性与环境试验》2013年第1期39-43,共5页Electronic Product Reliability and Environmental Testing

摘　　要：描述了硅微波功率三极管的失效模式,给出了器件输出功率与器件耗损功率的关系,得出了微波脉冲电流与有效值的关系,证明了器件在规定的参数范围内能可靠工作,推论了器件失效发生时的状态。指出器件的失效是热电正反馈熔融烧毁所致,是使用问题而不是器件的本质失效;其分析过程对其它器件的失效分析有指导作用。Failure mode of silicon microwave power transistor is discussed. Relationship between the device output power and consumption power are provided, Formula about the microwave pulse current and the effective value is obtained. Device can be reliably operated within the device specification, failure process of the device are stated. Failure of device is melting damager resulted in thermoelectric positive feedback. It is a misuse failure instead of an inherent weakness failure. The analysis process plays a leading role in other devices failure analysis.

关 键 词：硅微波功率三极管 耗散功率 熔融蒸发 

分 类 号：TN325.2[电子电信—物理电子学] TN323.4