集成电路圆片级可靠性测试  

Wafer Level Reliability Test for Integrated Circuits

作　　者：秦国林[1] 许斌[1] 罗俊[1,2] 

机构地区：[1]中国电子科技集团公司第二十四研究所,重庆400060 [2]西安电子科技大学微电子学院,西安710071

出　　处：《微电子学》2013年第1期143-147,共5页Microelectronics

基　　金：模拟集成电路重点实验室基金资助项目(9140C090406120C09037);民用航空预先研究资助项目(YG0901-3)

摘　　要：在集成电路制造厂的工艺监控体系中引入可靠性监控对于控制产品的可靠性十分重要。圆片级可靠性测试技术通过对集成电路产品的工艺过程进行可靠性检测,能够为集成电路制造工艺提供及时的可靠性信息反馈。圆片级可靠性测试通常是采用高加速应力对各种可靠性测试结构进行测试,以实现快速的工艺可靠性评价。对半导体集成电路圆片级可靠性测试的背景、现状和发展趋势进行了概况和探讨,介绍了目前在VLSI生产中应用最为广泛的栅氧化层经时击穿、电迁移和热载流子注入效应的可靠性测试结构。In wafer foundry,it is essential to make reliability monitoring as part of IC process monitoring system.Wafer level reliability（WLR） test techniques could promptly provide information regarding reliability of the product by making reliability test during the process.WLR programs for test structures with highly accelerated stress are necessary for fast evaluation of process reliability.The background and present situation,as well as developing trend,of WLR test was reviewed and discussed.And WLR test structures for EM,TDDB and HCI,which are most widely used in VLSI manufacturing,were also described.

关 键 词：圆片级可靠性 集成电路制造 热载流子注入 电迁移 

分 类 号：TN406[电子电信—微电子学与固体电子学]