NMOS晶体管沟道边缘电离辐射寄生漏电  

Parasitic Leakage of Channel Edge Induced by Ionizing Radiation in NMOS Transistor

作　　者：楼建设[1,2] 宣明 刘伟鑫 吾勤之 

机构地区：[1]上海交通大学微电子学院,上海200240 [2]上海航天技术基础研究所,上海201109

出　　处：《上海航天》2013年第1期64-67,共4页Aerospace Shanghai

摘　　要：对典型MOS器件的沟道边缘电离辐射寄生漏电进行了研究。给出了电离辐射条件下不同辐照剂量、辐照偏置、栅结构、沟道尺寸的典型NMOS晶体管电流-电压(I-V)特性曲线,并对试验现象进行了数值模拟分析。研究结果表明:NMOS晶体管的沟道边缘寄生漏电主要是由电离辐射感生氧化物陷阱电荷在场氧化层中积累造成的;截止辐照偏置下的寄生漏电明显小于导通偏置;与梳形栅和蛇形栅相比,环形栅结构未出现寄生漏电;NMOS晶体管沟道长度越小,寄生漏电就越严重。The parasitic leakage of channel edge induced by ionizing radiation in MOS device was studied in ibis paper. The IV characteristics of NMOS transistor under various irradiation dose, irradiation bias, gale structure and channel size were given out. The numerical simulation for the experiment results was analyzed. The resuhs showed that the parasitic leakage of channel edge in MOS device was induced by oxide trapped charge accumulation in field oxide layer which induced by ionizing radiation. The parasitic leakage under off irradiation bias was less than the parasitic leakage under on irradiation bias. Compared to comb and snake structure gate, the NMOS transistor having ring structure gate would not appear parasitic leakage. When the channel length of NMOS transistor got smaller, the parasitic leakage would be more serious.

关 键 词：NMOS晶体管 电离辐射效应 寄生漏电 

分 类 号：TN45[电子电信—微电子学与固体电子学] TN712