在(111)Si基底上直接溅射合成PbTiO_3薄膜以及Pb损失的抑制  

Synthesizing the PbTiO_3 Thin Film Directly on (111) Si with RF-Sputtering System and Decreasing the Pb-Loss

作　　者：赵强[1] 汤兆胜[1] 冯士猛[1] 范正修[1] 

机构地区：[1]中国科学院上海光学精密机械研究所薄膜技术中心,上海201800

出　　处：《功能材料》2000年第4期412-415,共4页Journal of Functional Materials

摘　　要：利用射频磁控溅射系统，采用 Ｔｉ、Ｐｂ组合靶，以 Ｏ２为反应气体，在（ １１１） Ｓｉ基板上直接沉积 ＰｂＴｉＯ３薄膜，通过对不同基底温度以及沉积后的薄膜在不同的氧气氛中来用不同的降温速率降温制备。通过对所得的薄膜的结构和组成以及光学和电学特性的测试、分析得出：在５３５℃时沉积、溅射后直接充入 １０７Ｐａ的氧气并且以 ３℃／ｍｉｎ的速率降至室温，制备出了性能较好的具有钙钛矿结构的ＰｂＴｉＯ３薄膜。并对薄膜的形成机理进行了探讨。PbTiO3 thin films with pervoskite- type microstructures were synthesized directly on the (111 ) Si substrate using a rfmagnetron sputtering with a composite target. The films were prepared at different substrate temperatures and were cooled down to room temperature in oxygen of different pressures and at various cooling rates as soon as the depositions finished, and then, they were investigated by various methods. The results showed that the lead loss was decreased when the films were cooled down in oxygen at a high pressure. and the microstructure of the film significantly depended on the substrate temperature and the cooling rate after deposition. The best substrate temperature was about 535℃, and the slower the cooling rate was, the better the microstructure was formed. The mechanism of the film formation was discussed and the ferroelectric and the optic properties were measured.

关 键 词：PBTIO3 铁电薄膜 Pb损失 冷却速率 

分 类 号：TM223[一般工业技术—材料科学与工程]