热处理对氧化铝陶瓷表面铜膜性能的影响  

Effects of heat treatment on performance of Cu films fabricated by magnetron sputtering on Al_2O_3 substrate

作　　者：乔英杰[1] 付洪波[1] 崔新芳 

机构地区：[1]哈尔滨工程大学材料科学与化学工程学院,黑龙江哈尔滨150001

出　　处：《材料热处理学报》2013年第2期142-146,共5页Transactions of Materials and Heat Treatment

基　　金：国家自然科学基金项目(60971020)

摘　　要：采用射频磁控溅射方法在Al2O3陶瓷基底上淀积厚度为500 nm的Cu膜,并将其于真空热处理炉中采用30℃/min和5℃/min两个升温速率升温至400℃退火处理2 h,研究了退火升温速度对铜膜表面形貌、电阻率及附着力的影响。结果表明:退火热处理使Cu薄膜表面粗糙度增加,铜膜电阻率降低,膜-基结合力增强。且30℃/min快速升温较5℃/min缓慢升温退火热处理,Cu薄膜表面粗糙度低,Cu薄膜表面电阻率低,膜-基结合力差。利用自由电子气理论和扩散理论对退火热处理过程引起的性能变化进行了分析解释。500 nm thick Cu films were prepared on Al2O3 substrate using radio frequency magnetron sputtering. With the heating rates of 30 ℃/rain and 5 ℃/min, the Cu films were heated up to 400 ℃ and kept for 2 h in a vacuum furnace. The effects of different heating rate on morphology, resistivity and adhesion strength of the films were studied. The results show that surface roughness of the Cu films increases and the resistivity decreases after annealing, and the adhesion strength of the films is improved at the same time. The surface roughness, resistivity and adhesion strength for the films annealed at 400 ℃ for 2 h with heating rate of 30 ℃/min are lower than that with heating rate of 5 ℃/min. The free electron gas theory and diffusion theory were used to analyse the effects of annealing on the properties.

关 键 词：磁控溅射 CU膜 退火热处理 微结构 性能 

分 类 号：TG174.44[金属学及工艺—金属表面处理] TM241.1[金属学及工艺—金属学]