CVD法制备ZnS的数值模拟  

Simulation of ZnS Prepared by Chemical Vapor Deposition

作　　者：王凡[1] 苏小平[1] 张树玉[1] 

机构地区：[1]北京有色金属研究总院有研光电,北京100088

出　　处：《热加工工艺》2013年第4期170-172,共3页Hot Working Technology

摘　　要：介绍了红外用光学材料ZnS的性能和制备方法。通过建立CVD法制备ZnS的物理模型,针对流量和压力对沉积过程的影响进行了数值模拟。结果表明,随气体流量的减小,沉积室内气流柱增高,回流区域增大,沉积速率增大且最大值上移。随沉积压力的减小,沉积室内气流柱同样增高,回流区域增大,沉积速率分布逐渐均匀化,但沉积速率整体减小。数值模拟的结果对具体的掌握沉积过程中的影响因素有一定的帮助。The characteristics and method of the technique of manufacturing ZnS by chemical vapor deposition was introduced. On the base of the reactor model, the effects of flow and pressure on the deposition process were simulated. The results show that, with the decrease of gas flow, the flow increases, the back flow area increases and the deposition rate increases. With the decrease of pressure decreases, the flow increase, the back flow area increases and the deposition rate distribute uniformly. The result of simulation is helpful for controlling the factors of the depostion process.

关 键 词：化学气相沉积 数值模拟 ZNS 

分 类 号：TG174[金属学及工艺—金属表面处理]