外置式电感耦合化学气相沉积法低温制备SiO_2薄膜  

Inductively Coupled PECVD Deposition of SiO_2 Thin Films at Low Temperature with Coupling Coils outside the Deposition Chamber

作　　者：席俊华[1] 刘永强[1] 杨凌霞[1] 季振国[1] 

机构地区：[1]杭州电子科技大学电子材料与器件工艺实验室,浙江杭州310018

出　　处：《材料科学与工程学报》2013年第1期84-87,83,共5页Journal of Materials Science and Engineering

基　　金：国家自然科学基金资助项目(61072015);浙江省科技计划资助项目(2011C37001)

摘　　要：设计了一种外置式电感耦合等离子增强化学气相沉积装置,并利用该装置在n型硅片上低温沉积了SiO2薄膜。通过扫描电子显微镜(SEM)、傅立叶变换红外吸收谱(FTIR)等对生长的薄膜进行表征。SEM测试结果表明,利用该装置沉积的SiO2薄膜表面平整,薄膜均匀性好;根据FTIR图中Si-O峰的横向与纵向光学声子吸收峰的分析发现,沉积功率越大,薄膜越疏松;等离子体区域内不同位置沉积的薄膜均匀,能够用于大规模、大面积的工业生产。此外,为了方便地获知SiO2薄膜的厚度,我们推导出了50W的功率下,薄膜厚度随沉积温度、沉积时间变化的经验公式。An inductively coupled PECVD system was designed and fabricated with the coupling coils outside the deposition chamber in order to avoid possible metallic pollution of the films. SiO2 thin films were deposited on n-type silicon wafer using this new PECVD system. SiOz thin films were characterized by SEM （Scanning Electron Microscope） and FTIR （Fourier Transform Infrared Spectroscopy）. The results show that SiOz thin films are smooth, homogeneous and can be deposited in a large area by the PECVD system. Furthermore, a thickness empirical formula of film was derived to calculate the thickness conveniently at different time and temperature in the power of 50W.

关 键 词：二氧化硅薄膜 电感耦合 等离子增强化学气相沉积 

分 类 号：TB321[一般工业技术—材料科学与工程] TB43