基于边界扫描的SRAM测试技术的研究与实现  

Research and Implement of SRAM Test Based on Boundary Scan

作　　者：陈寿宏[1] 颜学龙[1] 黄新[1] 

机构地区：[1]桂林电子科技大学电子工程与自动化学院,广西桂林541004

出　　处：《计算机测量与控制》2013年第2期324-326,共3页Computer Measurement &Control

基　　金：国家自然科学基金项目(61102012)

摘　　要：静态随机存储器(SRAM)应用广泛,必须充分测试以保证其高可靠性;应用边界扫描的虚拟探针技术实现SRAM测试,分析SRAM功能结构并建立测试模型;以HY6264SRAM存储器为被测对象进行DEMO板可测性设计,应用TCL语言描述其测试信息;实验证明,该方法可完成对SRAM外围线(包括控制线、数据线和地址线)和存储单元的测试与故障诊断,结果正确且诊断定位具体,具有较好的应用前景。Static random access memory （SRAM） is widely used and must be fully tested to ensure the high reliability. The virtual probe technology of boundary scan is applied to realize the SRAM test. SRAM function structure is analyzed and the test model is then established. The DEMO board is designed for test by using HY6264 and the test information is described by the TCL language. Test results show that the presented test method can accomplish the test and fault diagnosis for SRAM inner memory cell and peripheral lines including the control lines, data lines and address lines, results correct and diagnosis locations specific, which has good application foreground.

关 键 词：SRAM测试 边界扫描测试 故障诊断 TCL语言 

分 类 号：TP274[自动化与计算机技术—检测技术与自动化装置]