GaSb半导体表面极化子基态能量的研究  

Studies on the Ground State Energy of the Surface polaron in a GaSb Semiconductor Surface

作　　者：李子军[1] 肖景林[1] 

机构地区：[1]内蒙古民族大学物理系,内蒙古通辽028043

出　　处：《半导体杂志》2000年第4期1-4,11,共5页

基　　金：中国科学院激发态物理开放研究实验室和内蒙古高校自然科学基金项目!(A970 37)

摘　　要：采用L .L .P方法导出了表面极化子的基态能量 ,声子平均数 ,讨论了电子在反冲效应中发射和吸收不同波矢声子之间相互作用对GaSb半导体表面中表面极化子基态能量的影响。数值计算结果表明 :当动量趋于零时 ,声子之间的相互作用对极化子性质无影响 ;当动量达到某一值时 ,声子之间相互作用的能量占极化子总能量中非常显著的部分 ;随着动量 (平方 )的增加 ,声子平均数近似线性地增加。The ground state energy of the surface polaron and the mean number of the phonons were derived by using L.L.P method.The influence of the interaction between phonons of different wave vactors in the recoil process on the ground state energy of the surface polaron in the GaSb semiconductor surface was discussed.Numerical calculations show that there is no influence of the interaction between phonons on the character of the polaron when the momentum is at zero and the energy of the interaction between phonons hold the notable part of the total enevgy of the polaron when the momentum reach a certain value and the mean number of the pohonons increases in approximate direct ratio with increasing momentum(square).

关 键 词：表面极化子 声子 GASB 基态能量 锑化镓 

分 类 号：TN304.23[电子电信—物理电子学]