杂质和缺陷对非掺半绝缘LEC GaAs霍耳测量的影响  

Effect of Nonuniformity in Distributions of Impurities and Defects on Measurement of Hall Data for Undoped Semi-insulating LEC GaAs

作　　者：杨瑞霞[1] 付浚[1] 于明[1] 于海霞[1] 张富强[1] 

机构地区：[1]河北工业大学,天津300130

出　　处：《半导体杂志》2000年第4期5-11,共7页

摘　　要：研究了非掺杂半绝缘LECGaAs霍耳参数温度关系。研究结果表明 ,杂质和缺陷的不均匀分布引起的电势波动对霍耳测量结果有明显影响 ,存在电势波动的情况下 ,仅用霍耳测量不能测定真实的自由载流子浓度和费米能级位置。The temperature dependence of the Hall data was studied for undoped semi-insulating LEC GaAs. It was found that the potential fluctuations due to the nonuniformity of impurities and defects have a considerable effect on the Hall measurement. In the presence of the potential fluctuation, the exact carrier concentration and the Fermi level position can't be determined by solely Hall measuement.

关 键 词：非掺杂半绝缘LEC 霍耳测量 砷化镓 杂质 缺陷 

分 类 号：TN304.23[电子电信—物理电子学]