GaSb薄膜结构的X射线衍射谱的精细分析  

Study on the structures of GaSb film by X-ray diffraction spectra

作　　者：陈燕[1] 邓爱红[2] 郭辛[1] 

机构地区：[1]绵阳师范学院物理系,绵阳621000 [2]四川大学物理科学与技术学院物理系,成都610065

出　　处：《四川大学学报（自然科学版）》2013年第1期137-140,共4页Journal of Sichuan University(Natural Science Edition)

摘　　要：在GaAs单晶衬底上用分子束外延技术生长了GaSb薄膜,并用原子力显微镜和XRD技术分析了其结构特征.其结果可为生长优质的大失配太阳能电池材料提供一点参考.In this paper we present the results of X-ray diffraction spectra （XRD）, atomic force microsco- py （AFM） measurements on the undoped GaSb grown on the GaAs substrate by molecular beam epitaxy （MBE）. The properties and structures in these nano-materials have been described. The results can pro- vide some references to the growth of the high-quality mismatch materials in solar cell.

关 键 词：GASB 原子力显微镜 X射线衍射 

分 类 号：O474[理学—半导体物理]