原位光发射谱研究横向偏压金刚石薄膜生长过程  

In Situ Optical Emission Spectroscopy of the Diamond Film Growth Process in Transverse Bias

作　　者：廖源[1,2] 尚乃贵[2] 李灿华[2] 王冠中[1,2] 马玉蓉[2] 方容川[2] 

机构地区：[1]中国科学技术大学结构分析开放实验室 [2]中国科学技术大学物理系,合肥230026

出　　处：《无机材料学报》2000年第6期1061-1066,共6页Journal of Inorganic Materials

基　　金：国家自然科学基金项目资助课题

摘　　要：利用热丝ＣＶＤ方法研究了横向偏压对金刚石薄膜成核和生长的影响．实验表明，随着偏流的增加，金刚石在光滑硅衬底上的成核密度得到显著提高，最高可达 １．１×１０８ｃｍ－２．，但是横向偏压不利于金刚石薄膜的生长．原位光发射谱研究发现，横向偏流的增加提高了原子氢和ＣＨ基团的浓度，导致衬底表面非晶碳层的形成，这可能是造成横向偏压促进金刚石成核却不利于金刚石薄膜生长的主要原因．The nucleation and growth of diamond film under transverse bias was investigated in a hot-filament chemical vapor deposition system. It was shown that the nucleation density of diamond is enhanced with the increasing of transverse bias current. A nucleation density of 1.1×108cm-2 can be obtained, but transverse bias is harmful to the growth of diamond film. In situ optical emission spectroscopy technology was used to study the diamond film deposition process. The results showed that the improvement of the nucleation density and the harm of the growth may be caused by the abundance of atomic hydrogen and CH radical which is favorable to the formation of thin amorphous carbon layers.

关 键 词：金刚石薄膜 横向偏压 原位光发射谱 非晶碳层 

分 类 号：O484[理学—固体物理] O613.71[理学—物理]