短漂移区静电感应晶体管的特性研究  

Characteristics of the Static Induction Transistor with Short Drift Region

作　　者：张琳娇[1] 杨建红[1] 刘亚虎[1] 朱延超[1] 

机构地区：[1]兰州大学物理科学与技术学院微电子研究所,兰州730000

出　　处：《半导体技术》2013年第3期194-198,共5页Semiconductor Technology

摘　　要：为了满足静电感应晶体管(SIT)在中小功率高频领域的应用需求,基于SIT的工作原理以及中小功率高频应用对器件的性能要求,设计一款工作频率为600～800 MHz、通态电流I≈2 A、柵源击穿电压BVgso≈10 V、漏源击穿电压BVdso为100～120 V的常开型SIT。为了满足上述参数要求,设计了漂移区长度为4μm、有源区总厚度为10μm、单元周期为10μm的短漂移区SIT器件。通过数值模拟,研究了短漂移区SIT的电学特性,并与长漂移区SIT的电学特性做了比较和讨论。结果表明,短漂移区SIT具有通态电阻小、功耗小、线性度好、频率高的优点,在中小功率高频领域具有应用意义。The static induction trarlsistor （SIT） with the short drift region was presented in order to satisfy the requirement in small and middle power high-frequency field. Based on the working principle of the SIT and the performance requirements of small and middle power high-frequency applications, a normally-on SIT with the working frequency of 600 - 800 MHz, on-state current I - 2 A, gate-source breakdown voltage BV 10V and drain-source breakdown voltage BVdso of 100 - 120 V was designed. In order to meet the above requirements, the length of the drift region and the thickness of the active layer were set as 4μm and 10 μm, respectively, and its cell cycle was determined as 10 ;xm. The electrical properties of the device were analyzed through the numerical simulation, and were compared and discussed with the electrical properties of the long drift region SIT. The results show that the SIT with the short drift region has the advantage of small on-state resistance, low power-loss, high-frequency and good linearity, which makes the SIT have applications significance in small and middle power high- frequency field.

关 键 词：静电感应晶体管(SIT) 短漂移区 势垒 I-V特性 响应时间 

分 类 号：TN386.7[电子电信—物理电子学]