生长方向对量子点应变与应变弛豫的影响  

Influences of growth orientation on strain and strain relaxation of quantum dots

作　　者：叶盈[1] 周旺民[1] 

机构地区：[1]浙江工业大学机械工程学院,杭州310032

出　　处：《物理学报》2013年第5期481-486,共6页Acta Physica Sinica

基　　金：浙江省自然科学基金(批准号:Y6100440)资助的课题~~

摘　　要：由于材料弹性的各向异性与表面能的各向异性,不同的生长方向或生长面,量子点有不同的力学性能与行为.本文基于各向异性弹性理论的有限元方法,以金字塔型自组织InAs/GaAs半导体量子点为研究对象,分别在7个常见的生长方向或生长面上,对其应变能和应变弛豫能、自由能等进行了分析计算,得到了这些能量随生长方向的变化规律.结果表明(211)量子点应变弛豫能最大,而(100)量子点应变弛豫能最小.这些结果可为可控制备量子点提供理论参考.Different growth orientations influence the mechanical properties and behavior of quantum dots, due to the anisotropy of elasticity and surface energy of the material. In this paper, the relations of the strain energy, strain relaxation energy and free energy to growth orientation are analyzed for the self-assembled InAs/GaAs semiconductor quantum dots, based on finite element method of cubic elasticity theory. The results show that the strain relaxation of the （211） quantum dots is biggest, and that of the （100） quantum dots is smallest. These can provide the theoretical basis for the growth of quantum dots in a controlled fashion.

关 键 词：量子点 生长方向 平衡形态 应变弛豫 

分 类 号：O471.1[理学—半导体物理]