CCP/ICP混合放电C_4F_8/Ar等离子体高、低频功率对AZO薄膜绒面效果的影响  

Effect of high-frequency and low-frequency power of CCP/ICP C_4F_8/Ar plasma on the textured structure of AZO films

作　　者：吴明智[1,2] 金成刚[1,2] 王飞[1,2] 黄天源[1,2] 吴雪梅[1,2] 诸葛兰剑[1,3] 

机构地区：[1]苏州大学物理科学与技术学院,江苏苏州215006 [2]江苏省薄膜材料重点实验室,江苏苏州215006 [3]苏州大学分析测试中心,江苏苏州215006

出　　处：《功能材料》2013年第5期744-747,共4页Journal of Functional Materials

基　　金：国家自然科学基金资助项目(10575073);苏州市科技计划资助项目(SYJG0901);苏州大学2010年国家级大学生创新性实验计划资助项目(5731500910)

摘　　要：室温下,采用射频磁控溅射方法在石英基片上制备掺铝氧化锌(AZO)透明导电薄膜。利用CCP/ICP混合放电C4F8/Ar等离子体对制得的AZO薄膜进行绒面处理。利用原子力显微镜(AFM)对薄膜表面形貌进行表征,利用光纤光谱仪分析放电产生的碳氟基团含量的变化。实验结果发现低频功率的增大能够有效增加等离子体中F原子的含量,进而提高薄膜的刻蚀效果,获得较好的绒面结构;但是高频功率变化对薄膜刻蚀效果影响较小。Thin films of Al-doped zinc oxide （AZO） were prepared on quartz glass substrates by RF magnetron sputtering method. Then the AZO films were post-treated with CCP/ICP C4F8/Ar discharge plasma. Atomic force microscope was used to investigate the textured structure and optical emission spectroscopy （OES） was used to analysis the fluorocarbons content. We found thatthe increase of the low-frequency power could result in higher content of F which lead to better textured structure. The high-frequency power didn＇t have much effect on the textured structure.

关 键 词：AZO CCP ICP 绒面结构 发射光谱 

分 类 号：O53[理学—等离子体物理]