混合物理化学气相法(HPCVD)制备MgB_2超导薄膜技术  

Preparation of MgB_2 superconducting thin films by hybrid physics-chemistry vapor deposition

作　　者：周章渝[1,2] 杨发顺[1,2] 王松[1,2] 杨健[1,2] 傅兴华[1,2] 

机构地区：[1]贵州大学理学院,贵州贵阳550025 [2]贵州省微纳电子与软件技术重点实验室,贵州贵阳550025

出　　处：《功能材料》2013年第6期893-896,共4页Journal of Functional Materials

基　　金：贵州省科学技术基金资助项目(20092058;20112008);贵州大学自然科学青年科研基金资助项目(2009014)

摘　　要：介绍了采用混合物理化学气相法(HPCVD)工艺以乙硼烷(B2H6)为硼源在热蒸发镀膜机内以不同的沉积温度在(0001)取向的Al2O3单晶基底上制备了MgB2超导薄膜,采用扫描电子显微镜(SEM)、X射线衍射(XRD)和标准四线法电阻测量分析了沉积温度对生成的MgB2薄膜的表面形貌、晶体结构、超导转变温度的影响。结果表明,随着基底温度的升高,MgB2相结晶程度提高,c轴取向程度增强,薄膜整体性能显著提高。We have fabricated several superconducting MgB2 thin films by using the hybrid physical-chemical va por deposition （HPCVD） on A12 03 （0001） substrate by using B2 H6 at different deposition temperature. Scan- ning electron microscopy, X-ray diffraction and four-point probe method were carried out to study the effect of the deposition temperature on the superconductivity, surface morphology and structure of MgB2 thin films. The results showed that the MgB2 thin films have a preferred crystallization, c-axis orientation and superconducting properties as the temperature increasing.

关 键 词：MGB2超导薄膜 沉积温度 混合物理化学气相法(HPCVD) 

分 类 号：TN405[电子电信—微电子学与固体电子学]