运用低温Purge降低LPCVD氮化硅工艺的微粒污染  

Use Low Temperature Purge to Reduce Particles of LPCVD Si_3N_4 Process

作　　者：罗浚涛[1,2] 程秀兰[1] 

机构地区：[1]上海交通大学微电子学院,上海200240 [2]中芯国际集成电路制造(上海)有限公司,上海201203

出　　处：《电子与封装》2013年第2期32-36,共5页Electronics & Packaging

摘　　要：LPCVD制备的氮化硅薄膜具有良好的阶梯覆盖性,但是这种薄膜的应力偏高,在石英工艺腔管使用到8μm后易形成剥落微粒。特别是半导体工艺发展到了亚微米阶段,这一问题对于产品良率的影响也越来越大。文中以垂直式LPCVD设备为研究对象,通过利用晶圆冷却时间,运用降低工艺腔体温度并使用N2Purge的方法来改善微粒状况。通过大量对比实验来得出最优温度设定。运用这种方式不但改善了LPCVD设备制备氮化硅膜的微粒状况,还延长了设备的维护周期,增加设备利用时间。Silicon nitride film which deposited by LPCVD has better stage coverage, but with high stress. The quartz tube easily generate peeling particles after the thickness of Silicon nitride film over 8μm. With the development of IC industry, the yield became more critical about small size particles. This paper is based on the research of vertical LPCVD system, using low temperature N2 purge to remove peeling particles. This modification has proved the ability to reduce peeling particles and prolong PM cycle time.

关 键 词：微粒污染 垂直型炉管 低温N2Purge 剥落微粒 

分 类 号：TN305[电子电信—物理电子学]