室温非晶硅薄膜热电阻温度系数研究  

Study on the Temperature Coefficient of Resistance of Uncooled α-Si Thin Film

作　　者：伞振雷[1] 谢建生[1] 李金华[1] 

机构地区：[1]常州大学数理学院,江苏常州213164

出　　处：《常州大学学报（自然科学版）》2012年第3期9-13,共5页Journal of Changzhou University：Natural Science Edition

摘　　要：用离子束增强沉积(IBED)方法,在SiO2/Si衬底上沉积了非晶硅薄膜和注氢的非晶硅薄膜。研究薄膜的电阻温度系数(TCR)随制备工艺的变化,分析非晶硅薄膜电阻的稳定性对电阻温度系数的影响。本征非晶硅电阻太大,虽然经过适当地退火后,TCR能够达到6.39%K-1,但是电阻值还是过高,不适合制作器件。经过硼掺杂的非晶硅薄膜,电阻显著下降,相应的TCR可以达到6.80%K-1。制作的氢化非晶硅薄膜的电阻温度系数(TCR)高达8.72%K-1,且制作工艺简单,与常规集成电路工艺兼容性好。用离子束增强沉积的非晶硅薄膜可以用于制备红外探测仪。但实验还存在着重复性不好等问题,需要作深入的实验研究。The amorphous silicon（α-Si） thin film and the hydrogenated one were deposited on SiO2/Si substrates by ion beam enhanced deposition（IBED） method.The changes of the temperature coefficient of resistance（TCR） with preparation technology were studied and the effect of the stability of the α-Si thin film to TCR was analyzed.The resistance value of intrinsic amorphous silicon film is too high to make a device although TCR can reach 6.39%K-1 after appropriate annealing.The resistance of amorphous silicon films decreases significantly when doped with boron,the corresponding TCR can reach 6.80%K-1.The TCR of hydrogenated α-Si thin film is 8.72%K-1 at room temperature,and the preparation technology is simple and compatible with conventional IC process.The amorphous silicon thin film deposited by ion beam enhanced deposition can be used for the preparation of infrared detector.But further experimental research must be done for solving the problem of the bad repeatability.

关 键 词：非晶硅薄膜 离子束增强沉积 热电阻温度系数 红外探测仪 

分 类 号：TN21[电子电信—物理电子学]