多晶硅纳米膜欧姆接触特性的研究  

Research on Ohmic contact properties of polysilicon nanofilms

作　　者：崔虹云[1] 张海丰[1] 吴云飞[1] 李祖君[1] 王超[2] 董艳红[1] 

机构地区：[1]佳木斯大学理学院,黑龙江佳木斯154007 [2]黑龙江大学,黑龙江哈尔滨150001

出　　处：《黑龙江工程学院学报》2013年第1期71-74,共4页Journal of Heilongjiang Institute of Technology

基　　金：黑龙江省教育厅科学技术研究面上项目(12511569)

摘　　要：采用LPCVD和PECVD方法制作单层金属铝的多晶硅纳米膜欧姆接触,并用X射线对其表征,说明铝膜具有多晶结构。在温度为450℃的条件下,分别对5min、20min和40min的不同退火时间进行测试,得到在20min时Ⅰ-Ⅴ特性曲线表现出好的欧姆接触,构成线性关系,方块电阻达1kΩ,与接触电阻率相吻合,传输长度变到15μm,接触电阻为30Ω,说明电流的传导能力变强。A single layer of aluminum polysilicon nanofilm Ohmic contact is produced by I.PCVD and PECVD method, which microstructure of polysilicon nanofilms is characterized by X-ray diffraction. It indicates that the aluminum film has a polycrystalline structure. Below 450 ℃, the different annealing time of 5-min, 20-min and 40-min are tested and an I V characteristic curve obtained shows the good Ohms contact, constituting a linear relation in 20 min . And the square resistance goes up to 1 k Ω, complying with contact resistance rate, transmission length changes to 15 btm, and contact resistance for 30 Ω, resulting in a strong current conducted ability.

关 键 词：多晶硅纳米膜 欧姆接触 I—V特性 

分 类 号：TN305.93[电子电信—物理电子学]