绝缘栅双极晶体管串联关键技术  

Key technologies on series connection of insulated gate bipolar transistors

作　　者：余琳[1] 黄康[1] 王海军[1] 王剑平[1] 盖玲[1] 

机构地区：[1]浙江大学生物系统工程与食品科学学院,杭州310058

出　　处：《强激光与粒子束》2013年第5期1315-1319,共5页High Power Laser and Particle Beams

基　　金：国家高技术发展计划项目

摘　　要：为实现绝缘栅双极晶体管(IGBT)的多级串联,以电阻/电容/二极管(RCD)缓冲电路为动态均压电路,通过数学分析及PSpice仿真验证,建立了RCD缓冲电路参数选择模型;设计了基于数字信号处理器(DSP)控制、光纤隔离传输,以M57962L为IGBT驱动器的驱动电路及故障反馈电路,能驱动32只串联IGBT并对其进行过流和短路保护,32只IGBT的最大导通时间不超过90ns,短路保护响应时间约为6μs;设计了8路独立输出的50kV隔离的高压隔离电源,实现IGBT串联电路各部分的供电及电隔离。基于以上IGBT串联方法,实现了32只1200VIGBT的串联,串联电路可稳定工作在20kV电压下。In order to achieve the series connection of insulated gate bipolar transistors （IGBTs）, resistor-capacitor-diode （RCD） snubber circuit, which was chosen for active voltage sharing, was analyzed by mathematical methods, then the RCD snub- ber circuit parameters were modeled and proved by PSpice simulations. Based on optical fiber transmission and M57962L, the drive circuit and fault feedback circuit controlled by digital signal processor （DSP） were designed to drive 32 series connected IG- BTs and for overcurrent and short circuit protection. The maximum break-over time in 32 IGBTs was 90 ns, while failure protection completion time was 6 Vs. Eight independent isolated sources were designed for the isolation voltage of 50 kV. Based on the above research achievements, the 32 IGBTs series connected circuit can work safely under the voltage of 20 kV.

关 键 词：IGBT串联 RCD缓冲电路 IGBT驱动 短路保护 高电压隔离 

分 类 号：TN386[电子电信—物理电子学]