NBTI界面电荷反馈引起器件寿命变化的数值分析  

Numerical analysis of device lifetime change caused by interface feedback under NBTI stress

作　　者：曹建民[1] 贺威[1] 黄思文[1] 张旭琳[1] 

机构地区：[1]深圳大学电子科学与技术学院,深圳518060

出　　处：《深圳大学学报（理工版）》2013年第2期144-149,共6页Journal of Shenzhen University(Science and Engineering)

基　　金：国家自然科学基金资助项目(11109052);深圳市科技发展计划资助项目(201005280558A)~~

摘　　要：提出一种用二维器件数值模拟和负偏压温度不稳定性(negative bias temperature instability,NBTI)模型联合计算的方法,分析NBTI效应产生的界面电荷对pMOS器件栅氧化层电场和沟道空穴浓度的反馈作用.通过大量计算和比对分析现有实验得出:当NBTI效应产生较多的界面电荷时,由于界面电荷反馈,pMOS器件的NBTI退化将有一定程度的减小.这种退化减小是一种新的退化饱和机制,对不同类型器件的寿命具有不同的影响.在低NBTI器件中,界面反馈对器件寿命曲线的变化影响不大,器件寿命曲线趋向满足指数变化规律.在高NBTI器件中,界面反馈使得寿命曲线变化基本满足幂指数变化规律.A joint calculation method of 2D device simulation and negative bias temperature instability （NBTI） equations was proposed in this paper, which could be used to analyze the feedback of the created interface charge by NBTI effects on pMOS device gate oxide electric field and channel hole concentration. The analysis results show that when the interface charge of NBTI is generated to a certain extent, the degradation is decreased due to the in- terface feedback. The feedback of this interface charge to make NBTI degradation decreases is a new kind of satu- ration mechanism of degradation, which has a different influence on different types of devices. In the low NBTI de- vices, the interface feedback has little effect on the device lifetime curve. The device lifetime curve tends to meet the exponential variation; while in the high NBTI devices, the interface feedback makes the life curve of the de- vice to meet basically the power law variation.

关 键 词：半导体技术 MOS器件 负偏压温度不稳定性 计算机辅助设计 界面反馈 半导体器件寿命 

分 类 号：TN386.1[电子电信—物理电子学] TN306