基于肖特基接触的碳纳米管场效应晶体管  

Carbon Nanotube Field Effect Transistors Based on Schottky Contact

作　　者：金铁凝[1] 陈长鑫[1] 刘晓东[1] 魏良明[1] 王英[1] 张亚非[1] 

机构地区：[1]上海交通大学微纳科学技术研究院薄膜和微细技术教育部重点实验室微米/纳米加工技术国家级重点实验室,上海200240

出　　处：《微纳电子技术》2013年第4期201-205,219,共6页Micronanoelectronic Technology

基　　金：国家自然科学基金资助项目(61177052;60807008;50730008);全国优秀博士学位论文作者专项资金资助项目(201154);教育部新世纪优秀人才支持计划项目(NCET-11-0319);教育部霍英东青年教师基金项目(131064);上海市青年科技启明星计划项目(10QA1403500);韩国三星(Samsung)技术院"Global Research Outreach(GRO)Program"项目

摘　　要：由于具有独特的一维纳米结构、稳定的化学特性和优异的电学性能,单壁碳纳米管被认为是制作高性能电子器件以及下一代纳米电路的理想材料,作为新型基础电子元件的一种,碳纳米管场效应晶体管一直是研究的热点。研究了一种基于非对称肖特基接触的碳纳米管场效应晶体管,金属钯与金属铝分别作为电极材料制作出的碳纳米管场效应晶体管分别表现出p型和n型的导通特性,当这两种金属分别作为源、漏电极制作在单根半导体性单壁碳纳米管的两端时,便构成了非对称肖特基接触结构碳纳米管场效应晶体管。器件表现出了优良的整流特性,整流比达到103,在栅压的调控下,正向电流的开关比接近103。Due to the unique one-dimensional nanostructure, stable chemical properties and excel- lent electrical characteristics, the single-walled carbon nanotube （SWNT） is regarded as the ideal material to fabricate high performance electronic devices and the next generation of nanometer cir- cuits. As a new type of basic electrical devices, carbon nanotube field effect transistors are widely researched. The carhon nanotube field effect transistor based on the asymmetric Schottky contact was studied. The carbon nanotube field effect transistors were fabricated with palladium and alu- minum as the electrode materials, respectively, which showed the conduction characteristics of p- type and n-type, respectively. The two kinds of metals were used as source and drain electrodes fabricated on the two ends of an individual SWNT, respectively, and the carbon nanotube field effect transistor based on the asymmetric Schottky contact structure was constituted. The device shows the excellent rectification characteristic, and the rectification ratio reaches 10^3. The on-off ratio of the forward current is close to 10^3 under the control of the gate voltage.

关 键 词：碳纳米管 场效应晶体管 肖特基势垒 二极管 电子束光刻 

分 类 号：TB383[一般工业技术—材料科学与工程] TN386.3[电子电信—物理电子学]