Al组分对GaAs/Al_xGa_(1-x)As量子阱红外探测器峰值响应波长的修饰  被引量:3

Modification for peak wavelength of GaAs/Al_xGa_(1-x)As quantum well infrared photodetector by Al content

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作  者:胡小英[1,2] 刘卫国[1,2] 周顺[2] 陈智利[1] 

机构地区:[1]西安电子科技大学微电子学院,陕西西安710071 [2]西安工业大学光电工程学院,陕西西安710032

出  处:《光电子.激光》2013年第4期649-654,共6页Journal of Optoelectronics·Laser

基  金:国家总装部共性技术支撑项目(4040503104);教育厅项目(12Jk0980);国家自然科学基金(50975288);西安市创新计划(CXY1007-3)资助项目

摘  要:为了确定量子阱红外探测器(QWIP)峰值响应波长与势垒中Al组分的关系,建立微观结构表征与宏观特性的关系,设计不同组分含量的实验样品,对样品进行相应的测试,分析探讨了Al组分与理论峰值波长的关系。利用金属有机物化学气相沉积(MOCVD)生长GaAs/AlxGa1-xAs量子阱材料,分别制备出势垒中Al组分为0.23、0.32的1#、2#样品。用傅里叶光谱仪分别对其进行77K液氮温度下响应光谱测试及室温光致荧光(PL)测试。响应光谱结果显示,1#、2#样品峰值响应波长分别为8.36、7.58μm,与由薛定谔方程计算得到的峰值波长9.672、7.928μm的误差分别为15.6%、4.6%。利用高分辩透射扫描电镜(HRTEM)对样品进行分析发现,GaAs与AlGaAs晶格的不匹配及量子阱材料生长过程精度控制不够是造成1#样品误差较大的主要原因,说明势垒中Al组分x减小致使量子阱中的子带间距离逐渐缩小,导致峰值响应波长红移。PL实验结果与理论计算相符合,说明改变势垒中Al组分x可实现QWIP峰值波长的微调。In order to determine the relatoinship between the A1 content and the peak wavelength of quantum well infrared photodetector (QWIP). and establish another one between characterization of microstrueture and macroscopic properties of samples. The author designed two device-samples with different AI coment based on the bound to the quasi bound state transitions (b-qbQWIP) modle. Corresponding tests have been done, including photoresponse spectra, photolumineseenee speetra and high resolution transmission electron microscopy (HRTEM). The relation between A1 content and the peak wavelength is analyzed and discussed in theory. Two sample-devices of GaAs/AbGal- As quantum well infrared photodetectors have been made by using metal organic chemical vapor deposition (MOCVD). A1 content of 1 sample is 0. 23 while that of 2 one is 0.32. The photoresponse spectra are obtained at 77 K by using Fourier transform spectrometer while photolumineseenee spectra are tested at room temperature for two sample-devices of GaAs/AlGal-x As quantum well infrared photodetectors. The peak wavelengths of 1 g and 2 are 8.36/μm and 7.58 μm from photoresponse spectra,while the ones are 9. 672 /μm and 7. 928/μm according to Schrodinger equation. The main reason for 1 error much larger is crystal lattice mismatch between GaAs and A1GaAs and not precise controlling during growth of quantum well material after the crystal structure is investigated by using high-resolution transmission electron mi-croscope (HRTEM). It shows that reducing A1 content will lead to subband narrowed and peak wavelength red-shift. Photolumineseence results are consistent with Schrodinger equation.

关 键 词:量子阱红外探测器(QWIP) MOCVD AL组分 峰值响应波长 

分 类 号:TN215[电子电信—物理电子学]

 

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