沟道层厚度对室温制备的In_2O_3薄膜晶体管器件性能的影响(英文)  

Effect of Channel Layer Thickness on The Device Characteristics of Room TemperatureFabricated In_2O_3 Thin-film Transistors

作　　者：焦洋[1] 张新安[1] 翟俊霞[1] 喻先坤[1] 丁玲红[1] 张伟风[1] 

机构地区：[1]河南大学物理与电子学院河南省光伏材料重点实验室,河南开封475004

出　　处：《发光学报》2013年第3期324-328,共5页Chinese Journal of Luminescence

基　　金：中国博士后科学基金(20110490995)资助项目

摘　　要：在室温下采用直流磁控溅射以SiO2/Si为衬底制备了不同沟道层厚度的底栅式In2O3薄膜晶体管,讨论了沟道层厚度对底栅In2O3薄膜晶体管的电学性能的影响。实验结果表明:器件的特性与沟道层厚度有关,最优沟道层厚度的In2O3薄膜晶体管为增强型,其阈值电压为2.5 V,开关电流比约为106,场效应迁移率为6.2 cm2·V-1·s-1。In2O3 thin-film transistors（TFTs） with different channel thicknesses were fabricated on SiO2/Si substrates by DC magnetron sputtering at room temperature.The effects of the channel thickness on the electrical properties of In2O3 TFTs with bottom-gate configuration were investigated.The performance of devices was found to be thickness dependent.The In2O3 TFT with the optimized channel thickness exhibites enhancement mode characteristics,the threshold voltage is 2.5 V,the current on-off ratio is 106,and the field-effect mobility is 6.2 cm2·V-1·s-1.

关 键 词：In2O3薄膜 薄膜晶体管 沟道层厚度 电学特性 

分 类 号：O472.4[理学—半导体物理]