用干涉方法研究超薄栅MOS系统中FN振荡电流  

STUDY OF FOWLER-NORDHEIM TUNNELING CURRENT OSCILLATIONS IN ULTRA-THIN INSULATOR MOS STRUCTURE BY INTERFERENCE METHOD

作　　者：毛凌锋[1] 谭长华[1] 许铭真[1] 卫建林[1] 

机构地区：[1]北京大学微电子学研究所,北京100871

出　　处：《物理学报》2000年第5期974-982,共9页Acta Physica Sinica

摘　　要：采用干涉方法研究FN振荡电流 ,得到一个精确而且简单的测量栅介质层的厚度及隧穿电子在栅介质层导带中的有效质量的表达式 .通过和求解三角势垒的薛定谔方程得到的结果比较验证了干涉方法的可行性 .干涉方法揭示电子在隧穿过程中体现了波的本性 ,这种方法的一个重要特征是它对不同形状的势垒和势阱可能均适用 .还分析了有关FN振荡电流的实验现象 。Interference method is introduced to study the Fowler\|Nordheim tunneling current oscillations. An accurate and simple formula for measuring the oxide thickness and the electron effective mass in the conduction band of the oxide is given.A comparison between the results calculated directly from the Schrdinger equation and those from the interference method for the triangular barrier case shows that the interference method suits very well for studying Fowler\|Nordheim tunneling current oscillations.The interference method reveals the wave nature of the electron tunneling in the barrier.An important feature of this method is that it may be applicable to various shapes of potential barriers and wells. We also analyze the experimental results and give the physical meanings of them.

关 键 词：干涉 超薄栅MOS系统 FN振荡电路 

分 类 号：TN32[电子电信—物理电子学]