直流磁控溅射法在玻璃基片上制备TiN薄膜  

Preparation of TiN Thin Films by DC Reactive Magnetron Sputtering

作　　者：王有欣[1] 毛明旭[1] 王英才[1] 单玉桥[2] 

机构地区：[1]辽宁科技大学机械学院,辽宁鞍山114051 [2]东北大学材冶学院,沈阳110006

出　　处：《中国表面工程》2013年第2期61-65,共5页China Surface Engineering

摘　　要：采用直流反应磁控溅射法在玻璃片上制备了TiN薄膜,研究不同制备工艺条件与薄膜性能之间的关系。用紫外-可见光分光光度计测试了不同沉积时间和N2流量条件下TiN薄膜透光率;用X射线衍射仪分析了不同N2流量和溅射功率条件下TiN薄膜结构;用扫描电镜(SEM)观察了TiN薄膜的表面腐蚀形貌,用恒电位仪对TiN薄膜的耐腐蚀性进行了分析。结果表明:当沉积时间为2min,N2流量为15mL/min时,在可见光区有较高的透光率,在近红外区的透光率很低;当N2流量为15mL/min,溅射功率为4kW时,TiN薄膜的结晶最致密;当溅射功率为4kW时,TiN薄膜具有较好的耐腐蚀性。TiN thin films are plated by DC（direct current, DC） reactive magnetron sputtering on glass sub- strate. The relationships between the technical conditions of manufacture and the properties of the thin films are studied. The transmittance of TiN thin films with different deposition times and N2 flow is analyzed by u- sing visible spectrophotometer and ultraviolet radiation. The crystal structure of TiN thin films with different N2 flow and sputtering power is studied by XRD, and the corrosion surface morphologyof TiN thin films is ob- served by SEM. Finally, the corrosion resistance is analyzed by controlled rectifier. Experiment shows that there is a high transmittance in visible region and a low transmittance in infrared region when the deposition time is 2 rain and the N2 flow are 15 mL/min; the crystal of TiN thin films is very compact and well-propor- tioned when the sputtering power is 4 kW and the N2 flow is 15 mL/min; the films show good corrosion resistance when the sputtering power is 4 kW.

关 键 词：TIN薄膜 直流反应磁控溅射 透光率 耐蚀性 

分 类 号：TG174.444[金属学及工艺—金属表面处理]