ZnO∶Nb透明导电薄膜的制备及光电特性研究  

Deposition and photoelectric properties of ZnO∶Nb transparent conducting thin films

作　　者：周爱萍[1] 刘汉法[1] 臧永丽[1] 

机构地区：[1]山东理工大学理学院,山东淄博255049

出　　处：《功能材料》2013年第7期1012-1014,1019,共4页Journal of Functional Materials

基　　金：山东省自然科学基金资助项目(ZR2009GQ011)

摘　　要：采用直流磁控溅射法在玻璃衬底上沉积铌掺杂氧化锌(NZO)透明导电薄膜。通过X射线衍射(XRD)、扫描电镜(SEM)以及透射光谱等测试研究了溅射功率对薄膜结构、形貌以及光电性能的影响。实验结果表明NZO薄膜是多晶膜,具有ZnO的六角纤锌矿结构,最佳取向为(002)方向。溅射功率从40W增加到80W时,薄膜的电阻率迅速下降;功率超过80W时,电阻率趋于平稳。在溅射功率为100W时,电阻率具有最小值5.89×10-4Ω.cm,光学带隙具有最大值3.395eV。实验制备的NZO薄膜附着性能良好,在可见光范围内的平均透过率均超过86.6%。Niobium-doped zinc oxides transparent conducting films were deposited by DC magnetron sputtering on glass substrates.The effect of sputtering power on the structure,morphology and photoelectric properties of the films were investigated by X-ray diffraction,scanning electron microscopy（SEM） and transmission spectrum.The experimental results reveal that the NZO films possess a hexagonal wurtzite polycrystalline structure and the preferred orientation corresponds to the（002） peak.The resistivity decreases rapidly when the sputtering power increases from 40 to 80W.The resistivity tends to be stable when the power was over 80W.When the sputtering power is 100W,it is obtained that the lowest resistivity was 5.89×10-4Ω·cm and the largest optical band gap was 3.395eV.All the films present a high transmittance of above 86.6% in the wavelength range of the visible spectrum.

关 键 词：ZnO∶Nb薄膜 溅射功率 透明导电薄膜 磁控溅射 

分 类 号：O484.4[理学—固体物理]