氧空位对ZrSiO基MIM结构电容电学性能的影响  

Influence of Oxygen Vacancies on the Electrical Properties of ZrSiO Thin Fims Based Metal-Insulator-Metal Structure Capacitor Applications

作　　者：徐文彬[1] 任高潮[2] 

机构地区：[1]集美大学信息工程学院,福建厦门361021 [2]浙江大学信息与电子工程系,浙江杭州310027

出　　处：《集美大学学报（自然科学版）》2013年第2期157-160,共4页Journal of Jimei University：Natural Science

基　　金：福建省自然科学基金资助项目(2010J05136);福建省教育厅基金资助项目(JA11158)

摘　　要：研究了磁控溅射法制备得到的MIM结构ZrSiO薄膜电容,ZrSiO薄膜的制备以沉积时和沉积后退火过程中的氧气流量为主要工艺参数,重点讨论了由不同工艺条件导致的不同氧空位密度对漏电特性和电容-电压非线性等电学性能的影响.MIM capacitors were studied using magnetron sputterd ZrSiO films.The fabrication of ZrSiO films was performed with different O2 flow rate during sputtering and postdepositon annealing.The role of oxygen vacancies resulted from the different oxygen flow rate conditions was focused.The influence of these oxygen vacancies to the leakage character and capacitancevoltage nonlinearity of these capacitors was discussed.

关 键 词：氧空位 MIM电容 ZrSiO 

分 类 号：TN604[电子电信—电路与系统]