具有新型双空穴注入层的有机发光二极管  被引量:4

A novel organic light-emitting diode by utilizing double hole injection layer

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作  者:刘佰全[1,2] 兰林锋[1,2] 邹建华[1,2] 彭俊彪[1,2] 

机构地区:[1]华南理工大学高分子光电材料与器件研究所,广州510640 [2]发光材料与器件国家重点实验室,广州510640

出  处:《物理学报》2013年第8期449-453,共5页Acta Physica Sinica

基  金:国家重点基础研究发展计划(批准号:2009CB623604);国家自然科学基金(批准号:61204087;51173049;U0634003;61036007;60937001);中央高校基本科研业务费(批准号:2011ZB0002;2011ZM0009)资助的课题~~

摘  要:采用新型双空穴注入层N,N,N′,N′-tetrakis(4-Methoxy-phenyl)benzidine/Copper phthalocyanine(MeO-TPD/CuPc)及器件结构:ITO/MeO-TPD(15nm)/CuPc(15nm)/N,N′-Bis(naphthalen-1-yl)-N,N′-bis(phenyl)benzidine(NPB,15nm)/8-hydroxyquinoline(Alq3,50nm)/LiF(1nm)/Al(120nm),研制出高效有机发光二极管(器件D),与其他器件(器件A,没有空穴注入层的器件;器件B,MeO-TPD单空穴注入层;器件C,CuPc单空穴注入层)相比,其性能得到明显改善.器件D的起亮电压降至3.2V,比器件A,B,C的起亮电压分别降低了2,0.3,0.1V.器件D在10V时,其最大亮度为23893cd/m2,最大功率效率为1.91lm/W,与器件A,B,C的最大功率效率相比,分别提高了43%(1.34lm/W),22%(1.57lm/W),7%(1.79lm/W).性能改善的主要原因是由于空穴注入和传输性能得到了改善,通过单空穴型器件的J-V曲线对这一现象进行了分析.Highly efficient organic light-emitting diode is fabricated with a novel double hole injection layer consisting of MeO-TPD/CuPc. We observe that the insertion of such a double hole injection layer leads to a striking enhancement in the electrical property: higher luminance, power efficiency and lower driving voltage. It has the configuration of ITO/MeO-TPD (15 nm)/CuPc(15 nm)/NPB(15 nm)/Alq 3 (50 nm)/LiF(1 nm)/Al(120 nm). Its turn-on voltage is 3.2 V, which is 2, 0.3 and 0.1 V lower than those of the device without hole injection layer (device A) and the devices using MeO-TPD (device B), CuPc (device C) as hole injection layer, respctively. The highest luminance of the novel device reaches 23893 cd/m^2 at a drving voltage of 10 V. The maximum power efficiency of the novel decive is 1.91 lm/W, which is 43% (1.34 lm/W), 22% (1.57 lm/W) and 7% (1.79 lm/W) higher than those of devices A, B and C, respectively. The improvement is ascribed to its high hole injection and transport ability. The results are verified by using the J-V curves of "hole-only" devices.

关 键 词:有机发光二极管 空穴注入层 功率效率 势垒 

分 类 号:TN383.1[电子电信—物理电子学]

 

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