β-Ga_2O_3薄膜的分子束外延生长及其紫外光敏特性研究  

Preparation of β-Ga_2O_3 thin films by MBE method and ultraviolet-photoresponse study

作　　者：王伟[1] 褚夫同[1] 岳超[1] 刘兴钊[1] 

机构地区：[1]电子科技大学电子薄膜与集成器件国家重点实验室,四川成都610054

出　　处：《电子元件与材料》2013年第5期17-19,共3页Electronic Components And Materials

摘　　要：采用分子束外延(MBE)方法在Al2O3(0001)基片上生长了β-Ga2O3薄膜,利用XRD、SEM和AFM对薄膜的结构和形貌特性进行了表征。制作了基于β-Ga2O3薄膜的金属-半导体-金属(MSM)结构紫外探测器并对其进行了电学特性测试,结果表明:在20 V偏压下,器件的暗电流为8 nA;在波长为254 nm、光照强度为13×10–6W/cm2的紫外光照射下,器件的光电流为624 nA;器件的光电流与暗电流比值为78,光响应度达360 A/W,表现出明显的日盲紫外光响应特性。β-Ga2O3 thin films were prepared by molecular beam epitaxy （MBE） method on Al2O3 （0001）. The structure and morphology of the grown films were characterized by XRD, AFM and SEM. The metal-semiconductor-metal （MSM） structure UV photodetectors were fabricated from the β-Ga2O3thin films and the electrical properties of the prepared detectors were studied. The results show that the dark-current of the prepared detector is 8 nA at 20 V bias, while the photo-current is 624 nA under the irradiation of UV with the wavelength of 254 nm and the light intensity of 13×10^-6W/cm^2 The ratio of photo-current to dark-current is 78 and the photo responsivity is 360 A/W, which exhibit a significant solar-blind UV photoresponse.

关 键 词：β-Ga2O3 分子束外延 日盲 MSM 紫外探测器 光响应度 

分 类 号：TN36[电子电信—物理电子学]