激光场和温度对GaAs/Ga_(1-x)Al_xAs量子阱中施主杂质态的影响  

The Effects of Laser Field and Temperature on Donor Impurity States in GaAs/Ga_(1-x)Al_xAs Quantum Well

作　　者：候文秀[1] 危书义[1] 夏从新[1] 

机构地区：[1]河南师范大学物理与电子工程学院,河南新乡453007

出　　处：《河南师范大学学报（自然科学版）》2013年第2期53-56,共4页Journal of Henan Normal University(Natural Science Edition)

基　　金：国家自然科学基金(60906044);河南省自然科学基金(102300410100)

摘　　要：利用有效质量近似和变分原理,研究了激光场和温度对GaAs/Ga1-xAlxAs量子阱中基态施主束缚能的影响.结果显示,基态施主束缚能随着激光场的增强而减小,尤其是对于量子阱中心处的杂质,激光场的影响更明显.而且激光场对窄阱中杂质的施主束缚能有明显的影响.基态施主束缚能随着温度的增加而减小,随着Al含量的增加而增加,随着量子阱宽的增大而减小.并且随着阱宽的进一步增大,束缚能减小的趋势变慢.Within the framework of effect-mass approximation, the effects of the laser field and temperature on the ground-state donor binding energy in a GaAs/Gal-xAlxAs quantum well （QW） are investigated by means of a variational method. The results show that the donor binding energy decreases with the increase of the laser parameter. In particular, for the impurity near the center of QW, the effect of the laser field on the donor binding energy beeomes more pronounced. For a constant laser parameter, an increase in temperature results in a decrease in the ground-state donor binding energy. For given laser parameters and temperature, the ground-state donor binding energy increases as the Al composition x increases while groundstate donor binding energy decreases as the well width increases and the amplitude of variation the ground-state donor binding energy tends to be weak with the increase of the quantum well width.

关 键 词：激光场 温度 施主杂质 

分 类 号：O474[理学—半导体物理]