立方相InGaN的稳态和瞬态光学特性研究  

STEADY AND TRANSIENT OPTICAL PROPERTIES OF CUBIC InGaN EPILAYERS 

作　　者：徐仲英[1] 刘宝利[1] 李顺峰[1] 杨辉[1] 葛惟昆[2] 

机构地区：[1]中国科学院半导体研究所,北京100083 [2]香港科技大学物理系

出　　处：《红外与毫米波学报》2000年第1期11-14,共4页Journal of Infrared and Millimeter Waves

基　　金：国家攀登计划;国家自然科学基金!(编号 :1 99740 4 5)

摘　　要：用光荧光和时间分辨光谱技术研究了MEB生长立方In1-xGa1-xN(x=0.150.26)外延材料的稳态和瞬态发光特性.实验表明InGaN发光主要来自局域激子发光,局域化是由合金无序造成的,相应局域化能量为60meV左右.荧光衰退呈现双指数特性,快过程(50ps,12K)是自由激子的快速驰豫引起的,而慢过程(200～270ps,12K)则对应局域激子发光,其荧光寿命随温度缓变反映了激子发光的强局域性质.Photoluminescence (PL) and time resolved PL were employed to study the steady and transient optical properties of cubic In xGa 1-x N epilayers grown by MBE. The results suggest that the PL transitions in InGaN epilayers are mainly from localized exciton states. The localization energies are estimated to be 60 meV, independent of In composition. The PL decay is characterized by a bi exponential dependence. The fast process (50 ps at 12K) is related to the fast relaxation of excitons, while a slower contribution (200-270 ps at 12K) is attributed to the decay process of localized excitons.

关 键 词：InCaN 激光材料 半导体 稳态 光学特性 瞬态 

分 类 号：TN304.26[电子电信—物理电子学] TN244