具有负阻微分特性的NDR-MOS电路模型及应用  

Model and Applications of Negative Differential Resistance Characteristic Based on NDR-MOS

作　　者：林弥[1] 

机构地区：[1]杭州电子科技大学电子信息学院,浙江杭州310018

出　　处：《杭州电子科技大学学报（自然科学版）》2013年第1期5-8,共4页Journal of Hangzhou Dianzi University：Natural Sciences

摘　　要：该文介绍了基于MOS管构成具有负阻微分特性的网络,仿真了网络中各种参数改变对特性曲线的影响,负阻微分MOS网络可以模拟共振隧穿二极管的I-V特性。根据实际的InGaAs/AlAs/InP异质结共振隧穿二极管测试结果,通过设置合理的参数和偏置,给出了适用于蔡氏电路的非线性特性曲线,对今后设计基于共振隧穿二极管的混沌系统以及硬件电路的构建提供了理论基础。将共振隧穿二极管应用于混沌系统的设计中,相比于传统的基于运放构成的非线性网络,具有结构简单、功耗低、工作频率高等特点。The network which has the negative differential resistance （NDR） characteristic based on MOS transistors is introduced in this paper, its characteristics and curves are presented through SPICE simulation by changing parameters. The NDR-MOS network can simulate the I-V characteristic of resonant tunneling diode （RTD）. By setting reasonable parameters and bias, a nonlinear curve used for Chua＇s circuit is created corre- sponding to the real InGaAs/A1As/InP heterostructure RTD. The result offers the theory basis for designing chaotic system based on RTD and for constructing the RTD chaos hardware circuit. Compared with the tradi- tional nonlinear network in the chaotic Chua＇s circuit composed of the operational amplifiers, the chaotic sys- tem based on RTD have the advantages of simple structure, low power consumption, high working frequency and so on.

关 键 词：共振隧穿二极管 负阻微分网络 混沌系统 非线性特性 

分 类 号：TN402[电子电信—微电子学与固体电子学]