Mg掺杂的ZnO薄膜的带隙宽化  

Band Gap Widening of Mg-doped ZnO Thin Films

作　　者：胡永金[1] 吴云沛[1] 刘国营[1] 史秋月[2] 罗时军[1] 

机构地区：[1]湖北汽车工业学院理学系,湖北十堰442002 [2]湖北汽车工业学院材料工程系,湖北十堰442002

出　　处：《湖北汽车工业学院学报》2013年第1期56-59,共4页Journal of Hubei University Of Automotive Technology

基　　金：国家自然科学基金(10974048);湖北省优秀中青年科技创新团队资助项目(T200805);湖北省教育厅科研项目(B20122301)

摘　　要：用溶胶-凝胶法分别在硅片和玻璃衬底上生长出了纯的和Mg掺杂的ZnO薄膜。通过对Mg掺杂的ZnO薄膜进行元素成分分析,证明Mg元素成功地掺入到ZnO晶格中。通过透射光谱,得到了其带隙能量,且大小随着掺杂浓度的增加而线性增大。在同样掺杂浓度下,从光致发光光谱得到的带隙能量略大于通过透射光谱计算的结果,但是两者的增长率非常接近。Pure and Mg-doped ZnO thin films were fabricated on silicon and glass substrates by sol- gel method. The analysis on the composition of Mg-doped ZnO thin films illustrates that Mg element is successfully incorporated into ZnO matrix. Thebandgapnergies are obtained from transmittance spectra, and the values increase linearly with dopant concentration. The band gap energies from he photoluminescence peaks are slightly larger than those from the transmittance spectra at the same dopant concentration. However, the two increasing rates of the band gap energy with Mg concentration are very similar.

关 键 词：Mg掺杂的ZnO薄膜 溶胶-凝胶法 掺杂浓度 带隙宽化 

分 类 号：O472.3[理学—半导体物理]