SiN_x钝化膜厚度对pHEMT的性能影响  

Si_3N_4 passivation thickness effect on AlGaAs/InGaAs/GaAs pHEMT performance

作　　者：李洪芹[1] 夏冠群[1] 孙晓玮 

机构地区：[1]中国科学院上海冶金研究所,上海200050

出　　处：《功能材料与器件学报》2000年第3期165-169,共5页Journal of Functional Materials and Devices

摘　　要：深入地研究了SiNx钝化膜厚度对AlGaAs/InGaAs/GaAspHEMT电性能的影响，实验结果表明，pHEMT器件的截止频率随着氮化硅钝化膜厚度的增加而下降；当膜厚超过200nm时，将影响pHEMT器件电特性。The effect of silicon nitride passivation thickness on AlGaAs/InGaAs/GaAs pHEMT performance has been investigated extensively in this paper. The experiment results show that cut－ off frequency will drop as the passivation thickness increase for pHEMT. The electronic performance of the pHEMT was affected severely when SiNx thickness is larger than 200nm.

关 键 词：pHYEMT SiNx钝化膜厚度 电性能 晶体管 

分 类 号：TN325.3[电子电信—物理电子学]