半绝缘砷化镓中的低频振荡及其对FET噪声性能的影响  

Low－frequency oscillation in semi－insulating GaAs and their effect on FET noise

作　　者：张绵[1] 王云生[1] 李岚 白锡巍 

机构地区：[1]信息产业部电子十三所,石家庄050051

出　　处：《功能材料与器件学报》2000年第3期197-200,共4页Journal of Functional Materials and Devices

摘　　要：在无光照条件下测量背栅时,部分半绝缘砷化镓材料呈现明显低频振荡。对振荡特性进行了初步研究,并观察了振荡对GaAsMESFET噪声性能的影响。实验结果表明了采用不同低频振荡特性的材料制备器件时，其噪声性能也有差别。Clear low－ frequency oscillations were observed under dark back－ gating condition in some GaAs MESFET. The preliminary research on oscillation property and on effect of the oscillation on FET noise performance are described in this paper. It is indicated that the FET noise performance are different , if the devices are fabricated by GaAs single crystals with different oscillation behavior.

关 键 词：半绝缘GAAS 低频振荡 FET 噪声性能 

分 类 号：TN386[电子电信—物理电子学]