微波集成滤波器研究  

Microwave integrated filter on silicon － based by MEMS technology

作　　者：张海涛[1] 齐臣杰[1] 刘理天[1] 

机构地区：[1]清华大学微电子研究所,北京100084

出　　处：《功能材料与器件学报》2000年第3期205-207,共3页Journal of Functional Materials and Devices

基　　金：国家"973"基金项目!(G1999033105)

摘　　要：用MEMS技术在硅基片上制作了微波集成滤波器,并提出一种三维电容,该电容用MEMS的深槽刻蚀技术实现三维结构。该电容面积只有平面电容的1/3。电感采用MEMS的背面腐蚀技术,去掉硅衬底,减少了衬底损耗,解决硅衬底电阻率不高的缺点。导体采用MEMS的准LIGA厚胶光刻和电铸工艺,使金属膜的厚度大大增加,减少导体损耗,从而提高电感的Q值。Microwave filter integrated on the silicon chip was fabricated by technology of the microelectromechanical system (MEMS). A cubic capacitor of filter was realized through the processes of deep trench which etched by the ICP, so that areas of patterns of the cubic capacitors is decreased to one third of the plane capacitors. The plane inductor of the filter was manufactured on the insulation diagram under which the silicon substrate had been removed away. It lessened the substrate loss and improved the quality of the filter. The main merit of the 3D capacitor is to reduce the area of the pattern. The process of design and manufacture of the filter, capacitor and inductor is also discussed in this paper. A conductor of the filter is fabricated by using photosensitive polyimide electroplating molds. So the quality factor of the filter is raised.

关 键 词：微波集成电路 滤波器 MEMS 三维电容 

分 类 号：TN713.7[电子电信—电路与系统] TN454