高功率GaAs/GaAlAs单量子阱远结激光器  

High power GaAs/GaAlAs single quantum well remote junction lasers

作　　者：石家纬[1] 张素梅[1] 齐丽云[1] 胡贵军[1] 李红岩[1] 李永军[1] 刘建军[1] 张锋刚 

机构地区：[1]吉林大学电子工程系

出　　处：《功能材料与器件学报》2000年第3期240-242,共3页Journal of Functional Materials and Devices

基　　金：省科委基础研究项目!(19990526-1)

摘　　要：通过对50余只808nm的GaAs/GaAlAs高功率单量子阱远结半导体激光器的老化实验观测，在老化初期（前520h），阈值电流随老化时间的延长而下降，下降幅度高达57mA,从1000h多的恒流电老化结果可以看出，器件的输出光功率在老化初期有所上升，随后，表现出按指数规律缓慢下降的行为。初步实验结果表明器件具有长寿命的潜力。More than 50 GaAs/GaAlAs High Power Single Quantum Well Semiconductor Lasers are aged. The threshold current decreases during the early aging (first 520 h) and the largest decrease is 57 mA. From the aging result of more than 1000 h at constant current, we find that output power increases during the early aging , and then decay slowly according to exponent law. All results prove that the devices have potential of long lifetime.

关 键 词：高功率 单量子阱 结半导体激光器 GAAS/GAALAS 

分 类 号：TN248.4[电子电信—物理电子学]