高温退火对InGaAsP/InP双异质结光弹波导结构的影响  

Influence of high temperature annealing on InGaAsP/InP heterostructure photoelastic waveguide structures

作　　者：邢启江[1] 

机构地区：[1]北京大学物理系,北京100871

出　　处：《功能材料与器件学报》2000年第3期266-269,共4页Journal of Functional Materials and Devices

基　　金：国家自然科学基金资助项目!(69976003)

摘　　要：光弹效应光电子器件是一种适合光电子集成的新颖平面型器件结构。InGaAsP/InP双异质结外延片在直流负偏压120V作用下,利用射频溅射和光刻刻剥离技术在样品表面沉积110nm厚的W0.95Ni0.05金属薄膜应变条。在W0.95－Ni0.05金属薄膜应变条下的半导体内形成了对InGaAsP/InP双异质结构侧向光具有良好限制作用的光弹波导结构。W0.95Ni0.05金属薄膜及由其形成的光弹波导器件在氢氮混合气体（85％N2,15％H2）的保护下，分别在250℃，350℃，450℃，600℃温度下各退火0.5h以后，W0.95Ni0.05金属薄膜中压应变减少了原来的1/10左右。退火前后光弹波导输出的近场光模没有发生很大的变化。这些实验结果充分证明了由W0.95Ni0.05金属薄膜在InGaAsP/InP双异质结构内形成的光弹波导结构具有很高的热稳定性。Photoelastic optoelectronic device is a novel planar device which is suitable for optoelectronic integrations. Deposition of 110μ m thick W0.95Ni0.05 metal thin film stripe on InGaAsP/InP heterostructure wafer is carried out using both of rf sputtering with the substrate under a negative dc bias of 120V and a photoresist lift－ off technique. The photoelastic waveguides, which achieve the good lateral confinement of light in InGaAsP/InP heterostructures, are formed in semiconductor beneath a stripe of W0.95Ni0.05 thin film. The compression strain reduces about 10％ in the metal thin film, and has a little changes for near－ field optical mode after annealing at 250℃ , 350℃ , 450℃ , and 600℃ for 30 min in 85％ N2 and 15％ H2 mixed gas. These experimental results have well confirmed the highly thermal stability of photoelastic waveguide structures formed by W0.95Ni0.05 metal thin film in InGaAsP/InP heterostructures.

关 键 词：平面型波导器件 INGAASP/INP 高温退火 

分 类 号：TN36[电子电信—物理电子学] TN252