反应离子刻蚀工艺中的充电效应  

Modeling for Charging Effect during RIE Processing

作　　者：胡恒升[1] 张敏[1] 

机构地区：[1]中国科学院上海冶金研究所微电子学分部,上海200233

出　　处：《电子学报》2000年第11期81-83,67,共4页Acta Electronica Sinica

摘　　要：本文阐述了反应离子刻蚀 (RIE)工艺过程中充电效应产生的机理 ,认为它是由等离子体分布的不均匀性引起的 ,推导了等离子体充电电流的表达式 .In this paper,the mechanism for charging effect during RIE processing is discussed.It is thought to be caused by plasma nonuniformity,and an expression for plasma charging current is presented.The tunneling current density during plasma charging is calculated by comparing the difference of Q bd before and after plasma charging.

关 键 词：反应离子刻蚀 等离子体不均匀 充电效应 

分 类 号：TN405.983[电子电信—微电子学与固体电子学]