采用MOCVD方法的GaN薄膜制备试验研究  

Experimental Research on GaN Film Preparation by Using MOCVD Method

作　　者：孙媛媛[1] 李政[1] 钟咏兵[1] 赵立国[1] 

机构地区：[1]空军航空大学,吉林长春130022

出　　处：《工程与试验》2013年第1期27-29,共3页Engineering and Test

摘　　要：介绍了使用本实验室自制的MOCVD设备,以蓝宝石材料作为衬底,按照MOCVD方法设计的GaN薄膜制备试验。衬底入炉后先在1150"C的H2气氛下烘烤20min,然后降温至540"C、550"C、560"C、570"C和580"C生长20nm厚的GaN缓冲层,再升温至1100"C生长GaN外延,外延的厚度约为3μm。缓冲层生长温度为570"C时,样品外延的生长质量最好。Abstract：The homemade MOCVD equipment is introduced in this paper. The GaN film prepara- tion experiment is designed by using MOCVD method. In the preparation experiment, the sap- phire material is used as the substrate. After the substrate furnaces baking 20 minutes at 1150℃ under Hz atmosphere, the temperature is reduced to 540℃, 550℃, 560℃, 570℃ and 580℃, then, GaN buffer layer grows about 20nm thick. Then, heating up to 1100℃ to grow GaN epi- taxy, the thickness of the epitaxy is about 3ptm. The sample has the best quality of epitaxial growth when the temperature of buffer layer growth is 570℃.

关 键 词：MOCVD GAN薄膜 制备 

分 类 号：O614.371[理学—无机化学]