光学浮区法生长Si∶β-Ga_2O_3单晶及其光谱研究  

Growth and Optical Properties of Si∶β-Ga_2O_3 Single Crystal by Floating Zone Method

作　　者：王璐璐[1,2] 夏长泰[1] 赛青林[1,2] 狄聚青[1,2] 牟菲[1,2] 

机构地区：[1]中国科学院上海光学精密机械研究所,上海201800 [2]中国科学院大学,北京100049

出　　处：《人工晶体学报》2013年第4期607-610,共4页Journal of Synthetic Crystals

基　　金：江苏省高校优势学科建设工程资助项目;国家自然科学基金(51075211;51275230);教育部博士点基金(20113218110018);南京航空航天大学研究生创新基金(kfjj20110226)

摘　　要：采用浮区法生长了质量较好的Si∶β-Ga2O3单晶,直径约为8 mm,长度约为2 cm。进行了X射线粉末衍射和X射线荧光分析,结果表明所得Si∶β-Ga2O3单晶属于单斜晶系,而且Si确实进入了β-Ga2O3格位中;在室温下测试了Si∶β-Ga2O3吸收光谱,吸收截止边约为255 nm,并分析了退火对吸收截止边的影响;测试了荧光发射谱,研究了不同激发波长对其紫外及紫色波段发光的影响。β-Ga2O3, with about 20 mm length and 8 mm in diameter, was grown by the floating zone technique. XRD pattern for the obtained single crystal showed that the crystal belongs to the monoclinic crystal system. XRF analysis results revealed that there exactly is Si in the obtained crystal. It could be observed that the absorption edge is about 255 nm by the absorption spectra, and annealing effect is also studied on the absorption edge. Finally, fluorescence emission spectra of Si：β-Ga2O3 with different excitation wavelength were discussed.

关 键 词：Si∶β-Ga2O3 浮区法 光谱 

分 类 号：O78[理学—晶体学]