3D集成技术在尖端领域的应用及其发展趋势  

Status and Prospects of Advanced 3D Integration Technology

作　　者：王明涛[1] 何君[2] 

机构地区：[1]中国电子科技集团公司第五十五研究所,南京210016 [2]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《半导体技术》2013年第5期328-332,共5页Semiconductor Technology

摘　　要：近年来,随着微电子系统不断向微小型化发展,3D集成技术的开发和应用倍受关注。3D技术通常使用硅通孔把RF前端、信号处理、存储、传感等功能垂直集成在一起,从而达到增强功能密度、缩小尺寸和提高可靠性的目的。3D集成微系统的集成度和效率比传统电子系统提高了上百倍。以片上系统和封装中系统两大主流3D技术为例,对其在当前微电子领域,特别是在卫星、航天等科技领域的发展现状和产品特性进行了介绍,并对该技术所面临的挑战和未来发展方向做了分析预测。Development and application of three-dimensional integration technologies are becoming focus of eoneern in miniaturized eleetronic systems in recent years. Through-silicon via （TSV） is generally used to integrate the RF frontend, signal processing, storage and sensing functions vertically to improve functional density, size and reliability of mierosystems. The integration level and efficieney of 3D systems will be hundreds of times higher than those of the traditional ones. Development progress and relating products of two representative 3D technologies, system-on-chip （SoC） and system-in-package （SIP）, are introduced. Special attention is paid to application of the technologies in satellite and aerospace areas, etc. Challenges and prospects of the technology are analyzed.

关 键 词：3D系统 片上系统 封装中系统 3D集成 硅通孔 

分 类 号：TN305.94[电子电信—物理电子学]